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- 산학교수
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맹경무
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- 031-299-4157
- kmmang@skku.edu
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메모리 반도체
관심분야
메모리반도체
지능형 반도체
학력
(박사) 1999. 02. 서울대학교 전자공학과
(석사) 1994. 02. 서울대학교 전자공학과
(학사) 1992. 02. KAIST 전기 전자공학과
약력/경력
2023. 01. - 현재 성균관대학교 인공지능융합원 산학교수, 수원
1996. - 2022. 12. 상무, 삼성전자 메모리사업팀, LED 사업팀
학술지 논문
(2004) Direct Imaging of charge redistribution in a thin SiO2 layer, Europhysics Letters, 67(2), p621
(1999) Charge trap dynamics in a SiO2 layer on Si by scanning capacitance microscopy, Applied
Physics Letters
(1997) Observation of SiO 2 thickness variations on Si using AFM and SCM, Journal of the Korean
Physical Society 31
(1997) Depth dependent carrier density profile by scanning capacitance microscopy, Applied
Physics Letters
(1996) Direct imaging of SiO2 thickness variation on Si using modified atomic force microscope,
Journal of Vacuum Science & Technology B
(1996) Structure of nickel silicide on Si (001): An atomic view, Journal of Vacuum Science &
Technology B
(1996) Schottky barrier height measurement on NiSi2/Si(100) by capacitance microscope,Journal of
Vacuum Science & Technology B
학술회의 논문
(1997) Scaling Down of Tunnel Oxynitride in NAND Flash Memory: Oxynitride Selection and
Reliabilities, IEEE International Reliability Physics Symposium Proceedings
(1997) Impact of Low Thermal Budget Dual Oxidation on Tunnel Oxide Characteristics, 5th
International Conference on VLSI and CAD
(1997) A New Shared Bit Line NAND Cell Technology for the 256 Mb Flash Memory with 12V
- Programming , INTERNATIONAL ELECTRON DEVICES MEETING
(1997) Fast parallel programming of multi-level NAND flash memory cells using the booster-line
technology, IEEE SYMPOSIUM ON VLSI TECHNOLOGY
(1996) Direct Imaging of Dopant Profiles using Modified Atomic Force Microscope, Proceedings of
the IEEK Conference, The Institute of Electronics and Information Engineers
(1995) Capacitance Measurement for Electron Transport Characterization, Proceedings of The
Conference of Korean Vacuum Society